Rainbow-electronics AT49LV040 Manuale Utente

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1
4-megabit
(512K x 8)
Single 2.7-volt
Battery-Voltage
Flash Memory
AT49BV040
AT49LV040
Features
Single Voltage for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV)
Fast Read Access Time 70 ns
Internal Program Control and Timer
16K Bytes Boot Block with Lockout
Fast Chip Erase Cycle Time 10 seconds
Byte-by-byte Programming 30 µs/Byte Typical
Hardware Data Protection
Data Polling for End of Program Detection
Low Power Dissipation
25 mA Active Current
50 µA CMOS Standby Current
Typical 10,000 Write Cycles
Small Packaging
8 x 14 mm VSOP/TSOP
Description
The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288
words of 8-bits each. Manufactured with Atmels advanced nonvolatile CMOS technol-
ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over
the commercial temperature range. When the device is deselected, the CMOS
standby current is less than 50 µA.
The device contains a user-enabled boot block protection feature. The
AT49BV/LV040 locates the boot block at lowest order addresses (bottom boot).
Rev. 0679D03/01
Pin Configurations
Pin Name Function
A0 - A18 Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7 Data Inputs/Outputs
PLCC Top View
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
4
3
2
1
32
31
30
14
15
16
17
18
19
20
I/O1
I/O2
GND
I/O3
I/O4
I/O5
I/O6
A12
A15
A16
A18
VCC
WE
A17
VSOP Top View (8 x 14 mm) or
TSOP Top View (8 x 20 mm)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A11
A9
A8
A13
A14
A17
WE
VCC
A18
A16
A15
A12
A7
A6
A5
A4
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3
(continued)
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1 2 3 4 5 6 ... 12 13

Sommario

Pagina 1 - Pin Configurations

14-megabit(512K x 8)Single 2.7-voltBattery-Voltage™ Flash MemoryAT49BV040AT49LV040Features• Single Voltage for Read and Write: 2.7V to 3.6V (BV), 3.0V

Pagina 2

AT49BV/LV04010Software Product Identification Entry(1)Software Product Identification Exit(1)Notes: 1. Data Format: I/O7 - I/O0 (Hex); Address Format:

Pagina 3

AT49BV/LV04011AT49BV/LV040 Ordering InformationtACC(ns)ICC (mA)Ordering Code Package Operation RangeActive Standby90 25 0.05 AT49BV040-90JCAT49BV040-9

Pagina 4

AT49BV/LV04012Packaging Information.045(1.14) X 45˚PIN NO. 1IDENTIFY.025(.635) X 30˚ - 45˚.012(.305).008(.203).021(.533).013(.330).530(13.5).490(12.4)

Pagina 5

© Atmel Corporation 2001.Atmel Corporation makes no warranty for the use of its products, other than those expressly contained in the Company’s standa

Pagina 6

AT49BV/LV0402To allow for simple in-system reprogrammability, theAT49BV/LV040 does not require high input voltages forprogramming. Three-volt-only com

Pagina 7

AT49BV/LV0403code to stay in the device while data in the rest of thedevice is updated. This feature does not have to be acti-vated; the boot block’s

Pagina 8

AT49BV/LV0404Notes: 1. The 16K byte boot sector has the address range 00000H to 03FFFH.2. Either one of the Product ID Exit commands can be used.Comma

Pagina 9

AT49BV/LV0405Notes: 1. X can be VIL or VIH.2. Refer to AC programming waveforms.3. VH = 12.0V ± 0.5V.4. Manufacturer Code: 1FHDevice Code: 13HNotes: 1

Pagina 10 - Algorithm

AT49BV/LV0406AC Read Waveforms(1)(2)(3)(4)Notes: 1. CE may be delayed up to tACC - tCE after the address transition without impact on tACC.2. OE may b

Pagina 11 - AT49BV/LV040

AT49BV/LV0407AC Byte Load WaveformsWE ControlledCE ControlledAC Byte Load CharacteristicsSymbol Parameter Min Max UnitstAS, tOESAddress, OE Setup Time

Pagina 12 - Packaging Information

AT49BV/LV0408Program Cycle WaveformsChip Erase Cycle WaveformsNote: OE must be high only when WE and CE are both low.Program Cycle CharacteristicsSymb

Pagina 13 - 0679D–03/01/xM

AT49BV/LV0409Notes: 1. These parameters are characterized and not 100% tested.2. See tOE spec in “AC Read Characteristics” on page 6.Data Polling Wave

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